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| SMBT3906/ MMBT3906 PNP Silicon Switching Transistor * High DC current gain: 0.1 mA to 100 mA * Low collector-emitter saturation voltage * Complementary type: SMBT3904/ MMBT3904 (NPN) 3 2 1 VPS05161 Type SMBT3906/ MMBT3906 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipationTS = 71 C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point1) 1For calculation of R Marking s2A Pin Configuration 1=B 2=E 3=C Package SOT23 Symbol VCEO VCBO VEBO IC Ptot Tj Tstg Symbol RthJS Value 40 40 5 200 330 150 -65 ... 150 Value 240 Unit V mA mW C Unit K/W thJA please refer to Application Note Thermal Resistance 1 Jul-28-2003 SMBT3906/ MMBT3906 Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 40 V IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 10 A, IE = 0 V(BR)CBO V(BR)EBO I CBO hFE 40 5 - - 50 nA - Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector-base cutoff current VCB = 30 V, IE = 0 DC current gain1) IC = 100 A, VCE = 1 V IC = 1 mA, VCE = 1 V IC = 10 mA, VCE = 1 V IC = 50 mA, VCE = 1 V IC = 100 mA, VCE = 1 V 60 80 100 60 30 VCEsat - 300 V 0.25 0.4 0.85 0.95 Collector-emitter saturation voltage1) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA VBEsat Base emitter saturation voltage-1) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA 1Puls 0.65 - test: t 300s, D = 2% 2 Jul-28-2003 SMBT3906/ MMBT3906 AC Characteristics Transition frequency IC = 10 mA, VCE = 20 V, f = 100 MHz Collector-base capacitance VCB = 5 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance IC = 1 mA, VCE = 10 V, f = 1 kHz Open-circuit reverse voltage transf. ratio IC = 1 mA, VCE = 10 V, f = 1 kHz Short-circuit forward current transf. ratio IC = 1 mA, VCE = 10 V, f = 1 kHz Open-circuit output admittance IC = 1 mA, VCE = 10 V, f = 1 kHz Delay time VCC = 3 V, IC = 10 mA, IB1 = 1 mA, VBE(off) = 0.5 V Rise time VCC = 3 V, IC = 10 mA, IB1 = 1 mA, VBE(off) = 0.5 V Storage time VCC = 3 V, IC = 10 mA, IB1 = IB2 = 1mA Fall time VCC = 3 V, IC = 10 mA, IB1 = IB2 = 1mA Noise figure IC = 100 A, VCE = 5 V, f = 1 kHz, f = 200 Hz, RS = 1 k F 4 dB tf 75 tstg 225 tr 35 td 35 ns h22e 3 60 S h21e 100 400 h12e 0.1 10 10-4 h11e 2 12 k Ceb 10 Ccb 4.5 pF fT 250 MHz 3 Jul-28-2003 SMBT3906/ MMBT3906 Test circuit Delay and rise time -3.0 V 275 <1.0 ns +0.5 V 10 k 0 -10.6 V D = 2% C <4.0 pF 300 ns EHN00059 Storage and fall time -3.0 V <1.0 ns +9.1 V 0 -10.9 V 10 < t 1< 500 s D = 2% 10 k 275 C 1N916 <4.0 pF t1 EHN00060 4 Jul-28-2003 SMBT3906/ MMBT3906 DC current gain hFE = (IC) VCE = 1 V, normalized EHP00774 Saturation voltage IC = (VBEsat ; VCEsat) hFE = 10 EHP00767 10 1 2 mA h FE 5 C 10 2 5 125 C V CE V BE 10 0 25 C 10 1 5 -55 C 5 10 -1 -1 10 10 0 5 10 0 5 10 1 mA 10 2 0 0.2 0.4 0.6 0.8 1.0 V 1.2 C V BE sat , V CE sat Total power dissipation P tot = (TA*; TS ) * Package mounted on epoxy 400 mW Ptot 300 EHP00766 Permissible Pulse Load Ptotmax/PtotDC = (tp ) 10 3 Ptot max 5 Ptot DC D= tp T tp T EHP00936 10 2 5 200 TA TS 10 1 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 100 5 0 0 50 100 C TA ; TS 150 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s tp 10 0 5 Jul-28-2003 SMBT3906/ MMBT3906 Short-circuit forward current transfer ratio h21e = (IC ) VCE = 10V, f = 1MHz 10 3 EHP00770 Open-circuit reverse voltage transfer ratio h12e = (IC ) VCE = 10V, f = 1kHz 10 -3 h 12e EHP00769 h 21e 5 5 10 2 10 -4 5 5 10 1 -1 10 5 10 0 mA 5 10 1 10 -5 10 -1 C 5 10 0 mA C 10 1 Open-circuit output admittance h22e = (IC) VCE = 10V, f = 1MHz 10 2 s h 22e 5 EHP00771 Input impedance h11e = (IC) VCE = 10 V, f = 1kHz 10 2 h 11e k EHP00768 10 1 5 10 1 5 10 0 5 10 0 -1 10 5 10 0 mA 5 10 1 10 -1 -1 10 5 10 0 mA 10 1 C C 6 Jul-28-2003 SMBT3906/ MMBT3906 Delay time td = (IC) Rise time tr = (IC) EHP00772 Fall time tf = (IC) 10 3 ns t r ,t d 2 10 3 ns 25 C 125 C EHP00773 tr td 10 h FE = 10 tf VCC = 40 V 2 VCC = 3 V 15 V 40 V 10 h FE = 20 10 1 V BE = 2 V 0V 10 1 h FE = 10 10 0 0 10 5 10 1 5 10 2 mA 5 10 3 10 0 0 10 5 10 1 5 10 2 mA 5 10 3 C C 7 Jul-28-2003 |
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